Overcoming challenges in InP-based quantum dots: from nucleation mechanisms to high-performance quantum dot light-emitting diodes

Indium phosphide-based quantum dots (InP-based QDs) have emerged as promising candidates for next-generation display and optoelectronic technologies, offering exceptional photoluminescent (PL) properties including high efficiency, narrow emission spectra, and precisely tunable wavelengths. Nevertheless, their widespread commercialization encounters substantial obstacles, primarily stemming from persistent challenges in synthetic control and material processing. Critical performance parameters—including photoluminescence quantum yield (PL QY, currently35 nm) as well as external quantum efficiency (EQE) and operational stability of device—continue to show only incremental improvements, highlighting the urgent need for fundamental breakthroughs in QDs synthesis, surface engineering and device optimization. This review systematically examines the nucleation mechanisms governing InP core formation and outlines key strategies for optimizing InP-based core/shell QDs. Furthermore, we present a comprehensive analysis of recent breakthroughs in red, green, and blue-emitting InP-based QD light-emitting diodes (QLEDs) development, focusing on modulation of charge transport engineering and suppression of charge leakage. Finally, we critically evaluate the remaining commercialization challenges and future prospects for InP-based QLEDs in next-generation display and optoelectronic technologies, outlining potential pathways for overcoming current limitations.