TCAD Calibration and Simulation of SOI Nanowire MOSFET from 300K down to 82K
Abstract
This work presents three-dimensional TCAD simulations of a n-type nanowire MOSFET, from 300K down to 40K, operating in linear and saturation regimes, with different drain bias of 40mV, 700mV and 900mV. Based on experimental data, the simulator model’s parameters were calibrated considering mobility scattering mechanisms and velocity saturation from high longitudinal electric field, from 300K down to 82K. A Gaussian interface trap distribution was also considered. Very good agreement was obtained for the drain current and transconductance curves at 300K and 82K. There is also very good agreement of the threshold voltage, maximum transconductance, subthreshold swing, and low-field carrier mobility variations with temperature, and a well-defined Zero Temperature Coefficient point down to 40K.
Fields of Study & Subjects
Advancements in Semiconductor Devices and Circuit Design
Ferroelectric and Negative Capacitance Devices
Nanowire Synthesis and Applications
Publication details
- Journal / source
- Journal of Integrated Circuits and Systems
- Publisher
- Journal of Integrated Circuits and Systems
- Volume
- 21
- Issue
- 1
- Pages
- 1–7
- Publication date
- 12 April 2026