Enhancing OFET Biosensor Sensitivity: A Simulation Study on Doping and Optimizing dielectric /Semiconductor Thicknesses for Troponin Detection

In this study, we utilized finite element methods numerical modelling to explore the influence of doping, dielectric thickness, and organic semiconductor thickness on the sensitivity of Organic field-effect transistor (OFET) biosensors for troponin detection. Our comprehensive simulations revealed that doping enhances the biosensor's sensitivity. By systematically varying doping concentrations, dielectric thickness, and organic semiconductor thickness, we unravelled the intricate interplay of these parameters and their impact on the biosensor's performance. Our findings demonstrate that optimized doping profiles can significantly improve the sensitivity of the OFET biosensor, thereby enhancing its troponin detection capabilities. Additionally, we identified vital design parameters with significant potential for enhancing the performance of OFET biosensors in troponin detection applications. The insights from this study offer valuable guidance for the rational design and optimization of OFET biosensors, paving the way for developing susceptible and efficient biosensing platforms for cardiac marker detection in clinical settings. Furthermore, we plotted general design curves associated with OFET biosensors as 3D characteristics, providing a macroscopic view of the sensitivity variation against the three main factors discussed in this study. A sensitivity of approximately 4.6 µA/(pg/ml) was achieved with a doping concentration of 1018, under a 10 nm dielectric thickness and 30 nm organic semiconductor thickness. This sensitivity peak point was associated with a maximum power dissipation of 0.23 mW and a maximum leakage power of 17 µW, indicating an interesting trade-off between power management and sensitivity that warrants further investigation.