Analysis of the Advantages and Emerging Applications of ALD Technology in Semiconductor Manufacturing

Atomic layer deposition (ALD) technology, based on self-limiting surface reaction mechanisms, can precisely control film growth at the atomic scale and has gradually become a key process in semiconductor manufacturing.This article starts from the basic theory of ALD, compares its differences with traditional chemical vapor deposition (CVD), and focuses on discussing its practical applications in advanced semiconductor processes.The research finds that ALD performs outstandingly in high dielectric constant gate dielectrics (such as HfO₂), ultra-high aspect ratio metal interconnect barrier layers, and flexible electronic packaging, especially in conformal coating of complex threedimensional structures where it is irreplaceable.Although ALD has shortcomings such as low deposition rate and high cost of precursors, its precise control ability at the nanoscale provides important technical support for the development of next-generation semiconductor devices.In the future, by optimizing process efficiency and material compatibility, ALD is expected to further expand its application scenarios in microelectronics and emerging technologies.