Effect of Structural Layer on GaN HEMT Device Performance

Semiconductor materials have special conductive properties and are widely used in integrated circuits, transistors, optoelectronic devices and other fields.GaN, as one of its representative materials, has made significant progress in material growth and process preparation at present.However, the trap effect caused by structural layer defects during the device fabrication process will affect the performance of the device.This paper first discusses the locations and causes of surface states, interface defects of AlGaN/GaN heterojunctions, and bulk defects.Then, by analyzing existing research results, it elaborates on the impacts of these defects on device performance.Finally, it introduces measures such as GaN cap layers, passivation layers, and field plate structures that can improve defect-related issues and effectively reduce the negative effects of defects on device performance.This study provides a relatively comprehensive introduction to the defects of GaN HEMT and their impacts, and offers ideas for its future technological breakthroughs.