Analysis and Process Optimization of SiC MOSFET High-Temperature Region Characteristic Degradation Based on Silvaco Atlas

With the increasing competition in the international semiconductor industry, SiC MOSFET has become a research focal point in the power semiconductor field due to its material advantages as pivotal role.However, its reliability issues under extreme temperature conditions severely hinder practical applications.This study focuses on analysing the characteristic degradation of SiC MOSFETs in high-temperature zones through Silvaco Atlas simulations.For a start, theoretical analysis was conducted to investigate temperature-dependent variations in transistor threshold voltage, carrier mobility, and device leakage current.The subsequent software simulations confirmed the theoretical analysis and provided insights into the failure mechanisms.Finally, a process optimization method of gate oxygen nitrogen annealing (NO) was proposed to address the issue of interface state traps, and its improvement effect was verified through theoretical analysis and comparison with traditional structures.Although the analysis of optimized device characteristics only stays at the theoretical level, this study has preliminarily completed the simulation analysis of the hightemperature characteristics of SiC MOSFET, laying a theoretical foundation for future high reliability power device design and opening up new directions for interface engineering optimization.