In Situ Raman Spectroscopy of a Single Crystal Diamond for Contactless Temperature Monitoring during Growth in a Microwave Plasma Reactor

Bulletin of the Lebedev Physics Institute 2026

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Authors: V. Yu. Yurov, A. P. Bolshakov, M. Yu. Popov, I. A. Fedorova, S. G. Ryzhkov, P. A. Pivovarov, П. В. Волков, V. G. Ralchenko
DOI: 10.3103/s106833562560384x
Cited by: 1
References: 16

Abstract

Abstract We report the Raman spectrum measurement of a diamond single crystal during epitaxial growth in a microwave plasma reactor in a hydrogen‒methane mixture at various temperatures of the substrate. The crystal temperature is determined from the shift of the first-order Raman peak in the spectrum. It is shown that, compared to pyrometric methods, in situ Raman scattering enables more accurate measurement of the substrate temperature, which is critical for monitoring the CVD diamond synthesis process.

Fields of Study & Subjects

Diamond and Carbon-based Materials Research Microwave-Assisted Synthesis and Applications Advanced ceramic materials synthesis

Publication details

Journal / source
Bulletin of the Lebedev Physics Institute
Publisher
Allerton Press
Volume
53
Issue
2
Pages
74–80
Publication date
1 February 2026
Language
EN