Optimizing energy conversion in a PV-TGS (mSi–Bi₂Te₃) using numerical simulation of semiconductors materials

A numerical simulation model based on the energy transfer and conversion by the semiconductor materials of a Photovoltaic-Thermoelectric Generation System (PV-TGS) was developed to determine its theoretical power. The model yielded results that differed from those previously reported by other authors for PV panels and cells by a range of -0.017% to +1.74%. In thermoelectric production, the results deviated by a range of -2.27% to -2.80%. The model was formulated based on the constitutive equations of the phenomena inherent to the photovoltaic generation of a monocrystalline silicon PV panel (mSi) and the thermoelectric generation of bismuth telluride (Bi2Te3) Thermoelectric Generators (TEG). The primary variables of interest were irradiance (G), panel operating temperature (TPPV), and the cold section of the TEG (Tc), as well as the generated electrical power (P). The research outcomes enabled the identification of the optimal number of TEGs for the design of a PV-TGS. This determination was derived by considering the temperature differential between the TPPV and Tc sections, as well as the generation efficiency of PV-TGS as a function of incident radiation. Consequently, a pair of equations was formulated that establish a direct correlation between the thermoelectric generation rate and the desired output power.