Hybrid Optimization for High-Precision Parameter Extraction in Mo/Au/AlGaN/GaN Schottky Diodes
Abstract
Accurate parameter extraction is essential for understanding and optimizing the performance of Mo/AlGaN/GaN Schottky barrier diodes (SBDs). Traditional methods often introduce approximation errors, particularly in the presence of high series resistance. In this study, we propose a hybrid approach that combines Nonlinear Least Squares Fitting (NLSF) with the Lambert W function and Grey Wolf Optimization (GWO) to achieve high-precision extraction of key diode parameters, including the ideality factor (n), barrier height (Φb), and series resistance (Rs). By leveraging the strengths of both analytical and metaheuristic techniques, this method enhances accuracy and robustness in parameter estimation. Experimental validation across a wide temperature range (100 K – 450 K) demonstrates the effectiveness of the proposed approach, highlighting its advantages over conventional extraction techniques.
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Superconducting and THz Device Technology
Advanced Power Amplifier Design
Publication details
- Journal / source
- Revista Mexicana de Física
- Volume
- 72
- Issue
- 1 Jan-Feb
- Publication date
- 1 January 2026