Hybrid Optimization for High-Precision Parameter Extraction in Mo/Au/AlGaN/GaN Schottky Diodes

Read full text
Authors: Mohammed Mostefaoui, Abdelaziz Rabehi, Arslane Hatem Kacha, K. Hammouche, Halima Mazari, Kheira Ameur, Jean‐Marie Bluet, Abdelmalek Douara, Rabehi Abdelhalim, Mohamed Benghanem
Cited by: 0

Abstract

Accurate parameter extraction is essential for understanding and optimizing the performance of Mo/AlGaN/GaN Schottky barrier diodes (SBDs). Traditional methods often introduce approximation errors, particularly in the presence of high series resistance. In this study, we propose a hybrid approach that combines Nonlinear Least Squares Fitting (NLSF) with the Lambert W function and Grey Wolf Optimization (GWO) to achieve high-precision extraction of key diode parameters, including the ideality factor (n), barrier height (Φb), and series resistance (Rs). By leveraging the strengths of both analytical and metaheuristic techniques, this method enhances accuracy and robustness in parameter estimation. Experimental validation across a wide temperature range (100 K – 450 K) demonstrates the effectiveness of the proposed approach, highlighting its advantages over conventional extraction techniques.

Fields of Study & Subjects

GaN-based semiconductor devices and materials Superconducting and THz Device Technology Advanced Power Amplifier Design

Publication details

Journal / source
Revista Mexicana de Física
Volume
72
Issue
1 Jan-Feb
Publication date
1 January 2026