Performance enhancement of SnSb₂Se₃S solar cells through structural and optoelectronic modifications

This study investigates the optoelectronic properties of SnSb₂Se₃S, a novel material, for the first time, and evaluates its potential as a high-absorption thin-film solar cell absorber. Leveraging its unique nanoscale attributes and potential for Multiple Exciton Generation (MEG), SnSb₂Se₃S is explored for its capacity to enhance light absorption and charge carrier transport, positioning it as a promising candidate for advanced photovoltaic applications. A detailed analysis of Power Conversion Efficiency (PCE) as a function of absorber layer thickness demonstrates a direct correlation, with PCE values increasing from 5.87% at 2500 nm to 5.96% at 3000 nm. The impact of electron affinity on PCE is also examined, revealing an inverse relationship wherein increased electron affinity results in decreased efficiency due to alterations in charge transport dynamics. Furthermore, the temperature dependence of PCE is analyzed, indicating robust stability across a range of operating temperatures. Quantum Efficiency (QE) measurements show a significant response at 1240 nm, confirming effective infrared absorption. The carrier generation rate is evaluated, confirming efficient photon-to-electron conversion within the absorber layer. These results provide critical insights into the viability of SnSb₂Se₃S as an alternative absorber material for next-generation solar cells, setting the stage for subsequent experimental validation and device optimization.