Influence of Structural Parameters on Thermal Stress and Performance of High-Temperature SiGe Thermoelectric Modules

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Authors: Zhenghao Liu, Heng Yan, Jing Li, Xiaoxi Chen, Hang Jing, Yong Zhang, Qingpei Xiang, Mingyang Ma
Cited by: 0
References: 29

Abstract

Mechanical and thermoelectric performance of a SiGe thermoelectric module were investigated through finite element analysis. N-type and P-type SiGe thermoelectric materials were synthesized, and their mechanical and thermoelectric properties were experimentally measured. Thermal stress distributions within the SiGe module and the integrated “heat collector–module–heat sink” assembly are simulated, and the results were compared with the measured mechanical strength of the SiGe materials. The simulations show that among the three electrode structures evaluated—C/W/C sandwich, 0.5 mm W/C, and 0.1 mm W/C—the C/W/C sandwich configuration yields the lowest thermal stress. An inter-leg spacing of 0.5 mm also leads to reduced stress compared to a 0.1 mm gap. However, fully constraining the cold end or directly integrating the module with heat collection and dissipation components significantly increases thermal stress. The use of copper cooling plates induces higher stress than C-C plates, exceeding the tolerable strength of the materials. Simulation of a module with 28 SiGe legs (each 10 mm × 10 mm × 1.5 mm) predicts an output power of 7.42 W and a conversion efficiency of 7.11% at a hot-side temperature of 967 °C and a cold-side temperature of 412 °C.

Fields of Study & Subjects

Advanced Thermoelectric Materials and Devices Silicon Carbide Semiconductor Technologies 3D IC and TSV technologies

Publication details

Journal / source
Applied Sciences
Volume
16
Issue
1
Pages
545–545
Publication date
5 January 2026
Language
EN