Small-Signal Modeling and Nonlinear Characterization of Aligned Carbon Nanotube Schottky Barrier Diodes

Schottky barrier diodes (SBDs) based on low-dimensional materials are of interest for high-speed electronics due to their intrinsic nonlinear transport characteristics. In this work, aligned carbon nanotube Schottky barrier diodes (ACNT-SBDs) were systematically studied through electrical characterization, small-signal modeling, and large-signal nonlinear measurements. Devices with channel widths ranging from 50 to 500 µm were fabricated to examine size-dependent direct-current and high-frequency behavior. Clear Schottky rectification and pronounced geometry-dependent characteristics were observed, with the widest device achieving an intrinsic cutoff frequency of up to 282 GHz. Based on measured S-parameters, a refined small-signal model incorporating a parallel resistance–constant phase element (CPE) branch was developed, providing substantially improved agreement with measured S- and Y-parameters and phase response compared with the classical model. The extracted CPE parameters exhibit systematic dependence on channel width, indicating distributed junction charge dynamics associated with carbon nanotube interfaces. Furthermore, the large-signal nonlinear behavior was evaluated using an anti-parallel diode configuration, achieving a third-harmonic output power of −22.58 dBm at 30 GHz under zero-bias operation. This work provides a comprehensive experimental and modeling framework for understanding the high-frequency and nonlinear behavior of ACNT-SBDs.