A Procedure for Fast Circuit Cross Section Estimation

Semiconductor technologies are susceptible to radiation effects. The particle incidence in susceptible areas of an integrated circuit (IC) can generate physical interactions capable of producing errors. This paper predicts the IC cross sections for Single Event Effects. The cross section is a metric that provides an IC’s susceptibility to radiation. It deals with particle source interaction and physical design volumes. This work evaluates the IC cross section, exploring the physical design characteristics of susceptible regions in logic gates. It explores particles with low LET, identifying the charge collection areas. Also, the heavy ions are used to evaluate the critical cross section range. Distinct benchmark circuits were simulated to characterize sensitivity trends. The influence of circuit input conditions along with cells’ susceptibility reveals significant findings. The results indicate a difference up to ten times between low- and high-energy particles. Consequently, predicting the IC cross section at an early stage of the design flow is essential, especially for electronics devices used in radiation environments.