A Review of Thermal Management Techniques Adopted for High-Power-Density GaN-Based Converters

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Authors: M. Belguith, Sonia Eloued, M. Kadi, Jaleleddine Ben Hadj Slama, Mahmoud Hamouda
Cited by: 10
References: 209

Abstract

Power converters based on gallium nitride (GaN) are progressing swiftly owing to their exceptional efficiency and tiny dimensions, boosted by high power density and fast switching capabilities. Nevertheless, these benefits are accompanied by considerable thermal management issues that impact reliability, performance, and operational lifespan. This review examines advanced thermal management approaches for high-power-density GaN power converters, including active and passive cooling technologies, sophisticated packaging designs, and the use of novel materials like graphene and diamond to improve heat dissipation. The impacts of thermal boundary resistance, self-heating phenomena, and substrate selection on thermal performance are thoroughly analyzed. Strategies for enhancing printed circuit board (PCB) layouts, thermal vias, and the use of thermal interface materials (TIMs) are also emphasized. The study highlights co-design approaches that optimize thermal resistance and layout efficiency, supporting GaN operation under high-frequency conditions. This thorough investigation offers insights into addressing the thermal challenges linked to GaN technology, promoting its adoption in forthcoming power devices.

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies GaN-based semiconductor devices and materials Thermal properties of materials

Publication details

Journal / source
Chips
Publisher
MDPI AG
Volume
5
Issue
1
Pages
4–4
Publication date
22 January 2026
Language
EN