Deposition Characteristics of SiN Thin Film Deposited by Applying the Chucking Function in a Mono Polar ESC Heater

This study investigates the deposition of silicon nitride (SiN) thin films for advanced semiconductor applications, with a specific focus on overcoming thermal challenges in plasma-enhanced atomic layer deposition (PE-ALD) at an elevated temperature of 550 °C. At such high temperatures, a critical obstacle is wafer warpage induced by thermal and mechanical stress, which increases localized thermal contact resistance and degrades film uniformity. To address this, a wafer chucking function was integrated into a monopolar electrostatic chuck (ESC) heater. The ESC secures the wafer to the heater surface, effectively mitigating warpage and ensuring a uniform temperature distribution. Chucking performance was verified by monitoring lift-up motor torque variations and plasma parameters, such as self-bias voltage (Vdc) and peak-to-peak voltage (Vpp), confirming the formation of stable electrostatic coupling. A comparative analysis was conducted between SiN films deposited with and without a chucking voltage of +1000 V. Statistical evaluation across repeated experimental runs (n = 3) confirmed that ESC chucking significantly enhanced spatial uniformity without altering the fundamental PE-ALD growth mechanism. Notably, the application of ESC chucking suppressed the localized temperature drop at the wafer periphery, reducing the in-wafer temperature gradient from 7~8 °C to 2~3 °C. This thermal stability resulted in improved thickness uniformity (variation < 1 Å) and an increase in film density from 2.83 to 2.94 g/cm3. Furthermore, the physical contact between the wafer and the heater effectively eliminated backside deposition to near-zero levels. Pattern evaluation revealed an exceptional step coverage of 99% in high-aspect-ratio (20:1) structures. These results suggest that ESC-assisted PE-ALD provides a robust and reproducible method for high-quality SiN deposition by minimizing thermally induced film variations.