Study on the Influence of Copper Diffusion in GaN-Based Light-Emitting Devices

As MicroLED technology scales below 10 μm, Cu is increasingly utilized for interconnects due to its high thermal and electrical conductivity. However, Cu-induced degradation in GaN remains a critical reliability concern. This study investigates 10 nm Ni, Ti, and Pt barriers in Cu/Al stacks on green GaN-on-Si devices with a mesa diameter of 350 μm after isothermal annealing at 100 °C, 200 °C, and 300 °C for 2 h, aiming to provide a reference for future barrier design in scaled MicroLED devices. Electrical and electroluminescence measurements show that while 100–200 °C annealing optimizes contact resistance, higher temperatures cause Cu interdiffusion with metal-dependent severity. Ti emerges as the optimal general-purpose barrier, achieving the highest EL intensity among annealed samples at 300 °C, demonstrating that higher-temperature annealing enhances rather than degrades performance, thanks to effective Cu blocking and improved contact formation. Pt offers comparable barrier effectiveness with superior thermal stability, maintaining stable electrical characteristics and retaining 42% of peak EL intensity even at 300 °C. In contrast, Ni exhibits insufficient blocking, suffering 83% EL quenching and severe electrical degradation at 300 °C. Notably, as-deposited PtCuAl devices show an unexpected carrier localization effect yielding the highest recorded EL intensity (2750 a.u.), suggesting contact engineering opportunities. These findings establish a barrier effectiveness hierarchy (Ti ≈ Pt >> Ni) for thermal stability.