Large-Signal Equivalent Circuit Model for HighPower Laser Diode Mini-Array

High-power laser diodes are extensively utilized in advanced optoelectronic systems. These devices typically operate under high-current injection conditions, under which intrinsic parasitic parameters become non-negligible and exert a substantial influence on their electro-optical response characteristics. Furthermore, when multiple single emitters are monolithically integrated into a linear array along the epitaxial-layer direction on a single substrate, additional parasitic elements are inevitably introduced. These parameters are critical for characterizing the output performance of high-power laser diodes. This paper presents the implementation of an equivalent circuit model for large-signal laser-diode operation within the Advanced Design System (ADS) computer-aided environment. The proposed model enables accurate simulation of the device’s operating-voltage waveform and optical-output-power response under both DC steady-state and pulsed-transient driving conditions, thereby achieving a coupled representation of electrical behavior and optical emission. Sensitivity analysis of various parasitic elements is performed to systematically evaluate their influence on output characteristics and device reliability. The results provide theoretical guidance for structural optimization and packaging design, offering new insights into future modeling and reliability assessment of high-power laser diodes.