Applications and Implications of Wide-Bandgap Technologies in Microgrids: A Review

Energies 2026 Open access

Read full text
Authors: Daniel Burmester, Ramesh Rayudu, Alan C. Brent
DOI: 10.3390/en19051126
Cited by: 3
References: 179

Abstract

The next evolution in power electronics is being driven by wide-bandgap materials—particularly silicon carbide and gallium nitride power semiconductor devices—which increase efficiency and power density, thus ensuring their integration into high-performance systems. One system poised to receive benefits from this progression is microgrids. This paper reviews common microgrid architectures, components, voltage and power levels, and power electronics to establish where wide-bandgap materials, specifically silicon carbide and gallium nitride, may benefit current and future microgrids.

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies Advanced DC-DC Converters Microgrid Control and Optimization

Publication details

Journal / source
Energies
Publisher
MDPI AG
Volume
19
Issue
5
Pages
1126–1126
Publication date
24 February 2026
Language
EN