Radiation-Tolerant Bipolar Resistive Switching Characteristics of Hybrid Polymer–Oxide Composites for Resistive Random Access-Memory Applications

In this study, ZnO thin films were prepared on the flexible stainless steel (FSS) substrates by the sol–gel method. ZnO nanorods were then hydrothermally grown in the presence of polyvinyl pyrrolidone (PVP) to obtain polymer/nanooxide composites. The microstructure and resistive switching properties of the composites were investigated. X-ray diffraction results confirmed that the PVP-doped ZnO nanorods retained the hexagonal wurtzite structure and had a preferred (002) orientation despite a slight decrease in crystallinity. Surface morphology analysis showed that the addition of PVP resulted in an increase in the nanorod density and a more regular hexagonal structure. Electrical measurements showed a significant improvement in the resistive switching behavior, with a high-resistance state to low-resistance state (HRS/LRS) ratio of 4.67 × 103. In addition, radiation-tolerant cyclic tests demonstrated that the polymer–oxide hybrid structure effectively buffered irradiation-induced defects, stabilized conductive filament pathways, and preserved switching reliability. These results highlight the potential of PVP-doped ZnO nanorod composites as reliable, flexible, and radiation-tolerant RRAM devices for future aerospace and high-radiation electronics applications.