Device and Circuit Co-Optimization of Split-Controlled Flip-Flops Against Aging Towards Low-Voltage Applications
Abstract
The continued downscaling of transistors has exacerbated aging mechanisms such as bias temperature instability (BTI) and hot-carrier injection (HCI), posing significant reliability challenges for nanoscale integrated circuits. These effects are particularly critical to flip-flops operating at low supply voltages, which are essential for ultra-low-power applications including the Internet of Things (IoT) and biomedical implants. In this work, we address the aging issue in low-voltage Split-Controlled Flip-Flops (SCFFs) by proposing a novel transistor-level mitigation technique specifically tailored to this architecture within a domestic 14 nm process library. Through a detailed analysis of aging-critical transistors, three targeted enhancement strategies are introduced. Simulation results demonstrate that the improved SCFF achieves more than a 60% reduction in PMOS threshold voltage degradation and a 40% reduction in timing delay, while maintaining robust operation at a supply voltage as low as 0.4 V. These results highlight the effectiveness of the proposed approach in mitigating aging effects and enhancing reliability under low-voltage operation.
Fields of Study & Subjects
Low-power high-performance VLSI design
Radiation Effects in Electronics
Advancements in Semiconductor Devices and Circuit Design
Publication details
- Journal / source
- Micromachines
- Volume
- 17
- Issue
- 1
- Pages
- 111–111
- Publication date
- 14 January 2026
- Language
- EN