Structure-Dependent Parameter Trade-Off Optimization on RonCoff and Power Compression of AlGaN/GaN HEMTs for RF Switch Application

This paper presents, for the first time, the structure-dependent parameter trade-off optimization on figure-of-merit (RonCoff) and power compression of AlGaN/GaN high electron mobility transistors (HEMTs) for radio frequency (RF) switch applications. For GaN HEMTs operating in switching mode, it was demonstrated that RonCoff can be effectively reduced by increasing the gate foot length (Lg_foot), decreasing the gate cap length (Lg_cap), reducing the gate bias resistance (rg), and adopting a high work function metal for the gate electrode (Φg). However, these parameter adjustments affect power compression and RonCoff in opposing manners. This paper also presents supplementary research on the effects of source-drain spacing (Lds) and gate width (Wg) on switching performance. This research achieves a dynamic balancing method for structural parameters, delivering application-specific design rules for different scenarios ranging from high-frequency to high-power applications.