Inverters with Different Load Configurations and a Two-Input Multiplexer Based on IGZO NMOS TFTs

Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) have emerged as promising candidates for next-generation large-area and low-power electronics due to their high mobility, low leakage current, and compatibility with low-temperature fabrication on flexible or transparent substrates. In this work, we report the fabrication of bottom-gate a-IGZO NMOS TFTs using HfO2 as high-k gate dielectric and Mo top contacts. The devices were electrically characterized through capacitance–voltage (C–V) and current–voltage (I–V) measurements, from which key parameters were extracted. Based on these transistors, we designed, fabricated, and characterized inverters employing four different load configurations: resistive, diode, depletion, and pseudo-CMOS. A comparative analysis was performed in terms of voltage transfer characteristics (VTCs), gain, and noise margins, highlighting that depletion-load inverters offer the highest gain and robust noise margins. Finally, a two-channel multiplexer was designed and fabricated. The multiplexer was characterized under both square and sinusoidal input signals up to 1 kHz, demonstrating correct channel selection and robust switching behavior. These results confirm the potential of a-IGZO TFT-based circuits as building blocks for low-power and high-reliability digital and mixed-signal electronics.