The Effect of Multi-Oxide Layers on the Photoelectrical Performance of Double-Cavity Vertical-Cavity Surface-Emitting Lasers

A double-cavity vertical-cavity surface-emitting laser (VCSEL) can effectively suppress high-order transverse modes and achieve a high side-mode suppression ratio (SMSR). However, the double cavity also results in increased fundamental mode loss, reducing output power. In this study, both p-type and n-type oxide layers were simultaneously incorporated into a double-cavity VCSEL and the structure was numerically simulated using Pics3D (2024) software. The simulation results indicate that this approach can significantly enhance the output power, strengthen the single-transverse-mode characteristic, and thus improve the side-mode suppression ratio (SMSR). Generally, as the number of oxide layers increases, their ability to confine the optical field also enhances, trapping more high-order transverse modes within the oxide aperture, leading to a decrease in SMSR. However, in this study, the introduction of an n-type layer resulted in an abnormal increase in the SMSR, because the n-type oxide layer is situated between the active region and the second cavity. When the optical field oscillates between these two regions, some high-order transverse modes are blocked by the n-type oxide holes and cannot participate in mode competition, thereby increasing the SMSR.