Design of Circularly Polarized VCSEL Based on Cascaded Chiral GaAs Metasurface

Vertical cavity surface emitting lasers (VCSELs) have shown great potential in high-speed communication, quantum information processing, and 3D sensing due to their excellent beam quality and low power consumption. However, generating high-purity and controllable circularly polarized light usually requires external optical components such as quarter-wave plates, which undoubtedly increases system complexity and volume, hindering chip-level integration. To address this issue, we propose a monolithic integration scheme that directly integrates a custom-designed double-layer asymmetric metasurface onto the upper distributed Bragg reflector of a chiral VCSEL. This metasurface consists of a rotated GaAs elliptical nanocolumn array and an anisotropic grating above it. By precisely controlling the relative orientation between the two, the in-plane symmetry of the structure is effectively broken, introducing a significant optical chirality response at a wavelength of 1550 nm. Numerical simulations show that this structure can achieve a near 100% high reflectivity for the left circularly polarized light (LCP), while suppressing the reflectivity of the right circularly polarized light (RCP) to approximately 33%, thereby obtaining an efficient in-cavity circular polarization selection function. Based on this, the proposed VCSEL can directly emit high-purity RCP without any external polarization control components. This compact circularly polarized laser source provides a key solution for achieving the next generation of highly integrated photonic chips and will have a profound impact on frontier fields such as spin optics, secure communication, and chip-level quantum light sources.