High-Performance Terahertz Photodetectors Based on Spiral Structure-Regulated Graphene

Terahertz technology has demonstrated immense potential across a wide range of applications, particularly in the realm of THz photodetection. However, state-of-the-art detectors typically face fundamental trade-offs among sensitivity, response speed, operating temperature, and spectral bandwidth. While previous studies have shown that graphene field-effect transistors (GFETs) exhibit a broadband, room-temperature photoresponse to THz radiation-often attributed to photothermoelectric (PTE) and plasma-wave rectification effects-the similar functional dependence of these mechanisms on the gate voltage has historically made it challenging to disentangle their individual contributions. In this study, we leverage monolayer graphene as the photoactive material to overcome these limitations within a single device architecture. We present a novel THz photodetector driven predominantly by the PTE effect, facilitated by a precisely designed counterclockwise spiral antenna. The demonstrated device achieves exceptional room-temperature sensitivity, featuring a minimum noise equivalent power (NEP) of 80.7 pW/Hz alongside a rapid response time of less than 11 μs. Furthermore, by systematically analyzing the temporal response dynamics, we unambiguously identify the PTE effect as the dominant operating mechanism. These results provide a robust strategy for the development of high-performance, room-temperature THz optoelectronics, paving the way for advanced practical applications in high-capacity wireless communications and real-time THz imaging.