Exploring the Electronic Landscape of Two-Dimensional Tin Monoxide: Layer Thickness and Crystallographic Symmetry Effects

The ability to precisely control the electronic bandgap is crucial for tailoring two-dimensional (2D) materials for optoelectronic applications. In this work, we systematically investigate the electronic structure of 2D tin monoxide (SnO) across various layer thicknesses (monolayer to tetralayer) and crystallographic symmetries using first-principles calculations. Our results reveal a strong dependence of the bandgap on the number of layers, which decreases dramatically from 3.94 eV in the monolayer to nearly metallic in the tetralayer. Furthermore, different space group symmetries are found to significantly influence the bandgap, providing an additional degree of freedom for property tuning. This bandgap engineering is quantitatively linked to enhanced interlayer electronic coupling, as evidenced by a progressive increase in interlayer charge transfer with layer count. Our findings establish a clear structure–property relationship and offer practical guidance for designing SnO-based devices in flexible electronics and tunable optoelectronics.