Fast Growth of Centimeter-Scale Molybdenum Disulfide Single Crystal for Energy-Efficient Logic Circuits

Two-dimensional transition metal dichalcogenides (TMDs) are promising candidates for next-generation electronics, but their future application is hindered by the inherently slow growth kinetics of conventional vapor deposition methods, particularly for the synthesis of large-area single-crystal films. Here, we demonstrate a source-confined chemical vapor deposition strategy that enables the fast synthesis of centimeter-scale MoS 2 single-crystal films within just 10 min. An optimized sandwich-structured Mo source was employed to ensure a concentration-balanced metal supply under sodium chloride catalysis, followed by sulfurization to form MoS 2 . The films nucleate uniformly and directionally on the miscut C/A sapphire substrate positioned 2 cm upstream of the Mo source, achieving high crystal quality with a low sulfur vacancy density of 8.49 × 10 12 cm −2 . Additionally, these films support the development of high-performance enhancement-mode MoS 2 field-effect transistors, exhibiting excellent transport performances, including a high on–off ratio of 10 8 , an average positive threshold voltage of 1.71 ± 0.32 V, an average mobility of 34.28 ± 0.46 cm 2 V −1 s −1 , and an average subthreshold swing of 155.8 ± 33.7 mV dec −1 . Furthermore, high-performance rail-to-rail inverter gates and logic circuits with low power consumption (