In situ Al2O3 atomic layer deposition on pristine (0 0 1) GaAs: interface chemistry and its implication on charge carrier recombination and Fermi level pinning

Applied Surface Science 2026 Open access

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Authors: Nataliya V. Demarina, S Karimzadah, Benjamin Bennemann, Christoph Krause, Abdur Rehman Jalil, Heinrich Hartmann, Beata E. Kardynal, Mihail Ion Lepsa, Detlev A. Gruetzmacher
DOI: 10.34734/fzj-2025-05438
Cited by: 0

Fields of Study & Subjects

Semiconductor materials and devices Silicon and Solar Cell Technologies Semiconductor Quantum Structures and Devices

Publication details

Journal / source
Applied Surface Science
Publication date
1 January 2026
Language
EN