Effect of tungsten doping on the structure, electrical, and optical properties of Ta 2 O 5 films grown by MOCVD on LaF 3 substrates
Abstract
Abstract Doped Ta 2 O 5 is expected to become a novel wide bandgap semiconductor material. N-type tungsten-doped δ -Ta 2 O 5 films with hexagonal structure were deposited on LaF 3 (0001) wafer through MOCVD. The structure, phase transition, composition, optical and electrical characteristics of the obtained films were analyzed. The tungsten dopant caused transformation of Ta 2 O 5 film structure from tetragonal structure to hexagonal structure. When doping concentration reaches 1.5%, a pure hexagonal phase tantalum oxide film can be obtained with the δ -Ta 2 O 5 (0001) paralleled to the LaF 3 (0001). The W doped Ta 2 O 5 films exhibit n-type semiconductors properties and their optical band gaps are around 3.9 eV.
Fields of Study & Subjects
Ga2O3 and related materials
Metal and Thin Film Mechanics
Microwave Dielectric Ceramics Synthesis
Publication details
- Journal / source
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Volume
- 65
- Issue
- 2
- Pages
- 020905–020905
- Publication date
- 7 January 2026