Transient analysis of steep subthreshold slope gate-controlled carrier-injection silicon-on-insulator transistor for ultra-low power applications

Abstract In this study, we evaluated the transient characteristics of a steep-subthreshold-slope device, a gate-controlled carrier-injection silicon-on-insulator transistor (GCCI SOI-Tr). The GCCI SOI-Tr exhibited a delay time that decreased exponentially with increasing voltage. In particular, a near-zero delay was observed at a low overdrive voltage (0.2 V), raising the possibility of ultralow-power Complementary Metal-Oxide-Semiconductor (CMOS) applications. Furthermore, the carrier-ejection time was measured using the double-pulse measurement method. Consequently, the carriers are ejected exponentially. The results of tendencies in carrier-charging and ejection times can contribute to estimating the “integration” and “leaky” as the neuronal behavior for the spiking neural networks.