1X nm half-pitch pattern transfer using a spin-on glass and amorphous carbon hard mask for nanoimprint lithography

Japanese Journal of Applied Physics 2026

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Authors: Kenta Suzuki, Ryosuke Hamamoto, Yuji Kasashima, Tetsuya Ueda, Wataru Mizubayashi, Masanaga Fukasawa, Yoshihiro Hayashi, Masaki Ishida, Tomomi Funayoshi, Hiromi Hiura, Masayuki Kagawa, Noriyasu Hasegawa
+1 more Kiyohito Yamamoto
DOI: 10.35848/1347-4065/ae38ec
Cited by: 1
References: 19

Abstract

Abstract We demonstrate a multilayer hard mask (HM) composed of spin-on glass and an amorphous carbon film deposited by chemical vapor deposition (CVD) for a damascene process based on nanoimprint lithography (NIL). The HM stack enables the fabrication of 1X nm wide SiO 2 patterns without pattern wiggling during damascene integration. To evaluate the defects caused by CVD particles through electrical testing, we fabricated tungsten damascene interconnects with a 19 nm half-pitch by NIL. There were no failures across the total of 531 chips on an entire 300 mm wafer. An 81 nm deep and 14 nm wide trench structure was also obtained by deep-trench etching of SiO 2 .

Fields of Study & Subjects

Nanofabrication and Lithography Techniques Advancements in Photolithography Techniques 3D IC and TSV technologies

Publication details

Journal / source
Japanese Journal of Applied Physics
Publisher
IOP Publishing
Volume
65
Issue
2
Pages
028002–028002
Publication date
15 January 2026