4H-SiC Schottky-p - n + junction diodes with high rectification ratio and breakdown voltage

Abstract In this study, Schottky-p - n + junction diodes (SPNDs) were fabricated on 4H-SiC epitaxial wafers. A systematic comparison of forward and reverse characteristics was conducted using Pt and Al as Schottky metals with distinct work functions. The results indicate that a high work function metal significantly suppresses reverse leakage current and enhances blocking capability. Consequently, the Pt-SPND achieved a breakdown voltage exceeding 700 V and a rectification ratio greater than 10 8 . This work clarifies the critical role of the Schottky metal work function in regulating SPND performance, providing a basis for the structural design and metal contact selection of high-voltage SiC rectifiers.