The algorithm of insulated gated bipolar transistor (IGBT) associated with the characteristic curves in the region of gate bias slightly above the internal threshold voltage

Abstract IGBT includes both merits concerning hidden MOSFET and hidden BJT. The insulated Gate performs like an MOSFET taking control of the whole IGBT just like the role of an igniter or a starter. The scenario does impose an idea that I DS in MOSFET stimulates BJT which is composed of many diodes and equivalently deserves to be placed in the exponential argument of characteristic curve of diodes. However, thermal radiations coming from acceleration and deceleration of electrons or holes do take “kink” effects and block carriers from moving. The heat arises from moving carriers, causes vibrations of lattices, and then resistively reduces the mobility of carriers. Indeed, the final formula, combining MOSFET-BJT-like formula and the kink effects, intimately fits IGBT electrical characteristic curves, and thus serves as a promising algorithm.