Advances in cyclic and pulsed etching for atomic-level control in next-generation logic device fabrication

Abstract This study reviews the advancement of high-precision plasma etching control technologies for next-generation logic device fabrication. By temporally modulating plasma and bias parameters, independent control over deposition, etching, and by-product dynamics was achieved. The phase mask reconstruction process enabled area-selective carbon deposition during tri-layer extreme ultraviolet resist etching, while cyclic etching improved profile verticality in FinFET and nanosheet Fin structures. Ruthenium (Ru) etching was optimized through Cl 2 /O 2 chemistry combined with time-modulated bias, and DC pulse bias effectively suppressed charge-induced damage during work function metal patterning. These findings highlight that time-resolved plasma parameter control is a critical enabler for atomic-level etching precision in advanced semiconductor manufacturing.