Control of carrier injection in ambipolar SnO thin-film transistors by modifying surface states

Japanese Journal of Applied Physics 2026

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Authors: Chengfu Xu, Junyan Ren, Huizhe Tang, Hongfei Wu, Yiting Cheng, Zhishuo Sun, Yang Xu, Yuting Xiong, Yue Zhai, Lingyan Liang, Hongtao Cao
DOI: 10.35848/1347-4065/ae4437
Cited by: 0
References: 29

Abstract

Abstract This work analyzes carrier injection in SnO ambipolar thin-film transistors. The findings reveal that the surface states at the SnO surface would bring down the injection barrier, which can be modified by inserting an Al 2 O 3 thin film as a surface-modified layer. The addition of an Al 2 O 3 layer with a proper thickness raises the I on / I off ratios of both the n- and p- branches over 10 3 without the tradeoff of other device properties. Moreover, a simple formula is proposed to correlate injection barrier variation with the off-current variation, which is subsequently verified using the experimental data.

Fields of Study & Subjects

Thin-Film Transistor Technologies Organic Electronics and Photovoltaics Advancements in Semiconductor Devices and Circuit Design

Publication details

Journal / source
Japanese Journal of Applied Physics
Volume
65
Issue
4
Pages
041004–041004
Publication date
10 February 2026
Language
EN