Polarity-dependent asymmetric switching of ferroelectric AlScN thin films

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Authors: Hirofumi Nishida, Si-Meng Chen, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi, Kuniyuki Kakushima
Cited by: 1
References: 43

Abstract

Abstract Polarity-dependent ferroelectric switching of AlScN films on different electrode materials (TiN and Ta) was characterized by pulse measurements. The absolute coercive fields obtained with positive pulses were lower than those with negative pulses for both electrodes, suggesting a polarity-dependent energy barrier difference in ferroelectric switching. The switching with positive pulses follows nucleation-limited switching model, whereas the Kolmogorov–Avrami–Ishibashi model fits well for negative pulses. The asymmetry was modeled by assuming an unswitched region near the bottom electrodes, inferred from thickness-dependent capacitance measurements, forming an energetically less stable 180° ferroelectric domain wall.

Fields of Study & Subjects

Acoustic Wave Resonator Technologies Ferroelectric and Piezoelectric Materials Ferroelectric and Negative Capacitance Devices

Publication details

Journal / source
Japanese Journal of Applied Physics
Publisher
IOP Publishing
Volume
65
Issue
5
Pages
051001–051001
Publication date
19 February 2026