Effect of component of cinnamic acid-stabilized ZrO 2 nanoparticle resists on resist performance for EB and EUV lithography

Abstract Trans-cinnamic acid-stabilized ZrO 2 nanoparticles with zirconium content of 18.7%–26.1% (C3ZrR, C5ZrR, and C7ZrR) were synthesized by hydrolysis and polycondensation of zirconium tetrapropoxide in the presence of trans-cinnamic acid as the ligand. A transmission electron microscope revealed that trans-cinnamic acid-stabilized ZrO 2 formed the nanoparticles with a size of 5–10 nm. These nanoparticles, C3ZrR, C5ZrR, and C7ZrR, exhibited good solubility toward polar solvents, while the amount of trans-cinnamic acid affected the solubility. C5ZrR and C7ZrR acted as negative tone resist upon electron beam (EB) irradiation, and their sensitivities were 1.1 and 2.6 mC cm −2 , respectively. They exhibited excellent resolution for 30 and 50 nm line and space patterns. C5ZrR also showed extreme ultraviolet (EUV) activity; however, its sensitivity is low. The zirconium content and the ligand structure have effects on solubility, particle size, and lithography performance under EB and EUV exposure.