Influence of substrate acceptor concentration on the density of states in MOS structures
Abstract
Abstract It has been demonstrated that a random potential gives rise to an exponential tail in the density of states (DOS) of two-dimensional electron gases when a Gaussian random potential is assumed [Mori, Jpn. J. Appl. Phys. 64, 01SP14 (2025)]. However, the physical origin of such a random potential has not been fully elucidated. In this study, we calculate the random potential profiles induced by ionized acceptors in the substrate and examine their impact on the DOS in Si metal-oxide-semiconductor structures. The results show that the spatially averaged DOS exhibits an exponential tail on the low-energy side. The tail width is on the order of several meV, increases with acceptor density, and shows a weak dependence on substrate orientation.
Fields of Study & Subjects
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
Semiconductor materials and interfaces
Publication details
- Journal / source
- Japanese Journal of Applied Physics
- Volume
- 65
- Issue
- 7
- Pages
- 07SP07–07SP07
- Publication date
- 12 March 2026
- Language
- EN