Enhancement of CMP removal rate of SiC by ion implantation
Abstract
Abstract SiC has attracted attention as a material for power semiconductor devices. However, since it has low CMP efficiency, strong and hazardous oxidants have been used to improve productivity. Against this background, we demonstrated that surface modification of the substrate by ion implantation enables a very high CMP removal rate even with a colloidal silica slurry alone. In this study, cross-sectional TEM, gravimetric measurements, and secondary ion mass spectrometry analyses were performed, and the results from these three methods showed good agreement.
Fields of Study & Subjects
Advanced Surface Polishing Techniques
Advanced ceramic materials synthesis
Ion-surface interactions and analysis
Publication details
- Journal / source
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Volume
- 65
- Issue
- 8
- Pages
- 088003–088003
- Publication date
- 13 April 2026