In-situ surface analysis during atomic layer etching of TiN by chlorine radical irradiation at low temperature and thermal desorption
Abstract
Abstract The atomic-level behavior of a titanium nitride (TiN) surface under chlorine radical irradiation at − 10 °C and thermal desorption at 145 °C was studied using in situ X-ray photoelectron spectroscopy. These processes are integrated for thermal-cyclic atomic layer etching of TiN. Chlorine radicals rapidly generate volatile TiCl 4 on the TiN surface through the self-limiting formation of an intermediate species, TiN x Cl y . Subsequent heating at 145 °C removes TiCl 4 , whereas the intermediate TiN x Cl y remains on the surface. Controlling the self-limitation and selective removal is essential for evaluating the removal of TiN x Cl y .
Fields of Study & Subjects
Metal and Thin Film Mechanics
Copper Interconnects and Reliability
Semiconductor materials and devices
Publication details
- Journal / source
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Volume
- 65
- Issue
- 12
- Pages
- 12SP06–12SP06
- Publication date
- 28 May 2026