(110)- and (−134)-faceted surface morphology of halide vapor phase epitaxy-grown β- Ga 2 O 3 homoepitaxial layers on (011) substrates
Abstract
Abstract The surface morphology of the homoepitaxial layer grown on a (011) β -Ga 2 O 3 substrate by HCl-based halide vapor phase epitaxy was investigated using atomic force microscopy (AFM) and transmission electron microscopy (TEM). The surface consisted of (110) and (−134) facets elongated along [1−11], with facet coverage ratios of 0.207:0.793 (AFM) and 0.210:0.790 (TEM), in close agreement with the geometrically expected ratio of 0.219:0.781. Thus, the surface can be regarded as being composed of (110) macrosteps and (−134) terraces. These findings indicate that growth kinetics and impurity incorporation should be discussed based on the actual (110) and (−134) faceted morphology, rather than the nominal (011) substrate orientation.
Fields of Study & Subjects
Ga2O3 and related materials
GaN-based semiconductor devices and materials
Neonatal and Maternal Infections
Publication details
- Journal / source
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Volume
- 65
- Issue
- 13
- Pages
- 138001–138001
- Publication date
- 8 July 2026
- Language
- EN