Electronic-stopping and damage parameters for random and channeled implantation of B, N, O, and Si into GaN(0001)
Abstract
Predicting implanted-ion depth profiles and lattice damage is important for GaN power devices but remains challenging under channeling and for nitrogen, inaccessible to secondary-ion mass spectrometry (SIMS). Using the binary-collision code scatGUI, we reproduce the random and channeling SIMS profiles of B, O, and Si in GaN(0001) over 20–930 keV with few electronic-stopping parameters. The damage of random-implanted B, N, and O, measured by Rutherford backscattering/channeling, is reproduced by scaling the modified Kinchin–Pease Norgett–Robinson–Torrens, displacement count by one efficiency factor per ion, constraining the nitrogen parameters ( C Se ≈ 1.0, C NRT ≈ 0.27). For silicon this factor increases with depth, suggesting larger defect clusters.
Fields of Study & Subjects
Ion-surface interactions and analysis
GaN-based semiconductor devices and materials
Silicon and Solar Cell Technologies
Publication details
- Journal / source
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Volume
- 65
- Issue
- 17
- Pages
- 170901–170901
- Publication date
- 19 August 2026