High mobility SiC MOSFETs using an oxidation-minimizing process

Applied Physics Express 2026 Open access

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Authors: Koushik Ramadoss, Ashalata Samal, Dallas Morisette, James Cooper
DOI: 10.35848/1882-0786/ae3366
Cited by: 3
References: 31

Abstract

Abstract We report high channel mobility in 4H-SiC (0001) MOSFETs fabricated using an oxidation-minimizing process consisting of (i) hydrogen etching, (ii) silane passivation, (iii) amorphous silicon deposition, (iv) low-temperature oxidation, and (v) nitric oxide annealing. A high channel mobility (∼80 cm 2 Vs −1 ) is achieved in ion-implanted channels. Devices are stable under thermal and electric field stress, but the threshold voltages are negative. Our experiments demonstrate a 4.5 × increase in field-effect mobility at body dopings used in commercial power devices.

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies Thin-Film Transistor Technologies Diamond and Carbon-based Materials Research

Publication details

Journal / source
Applied Physics Express
Publisher
IOP Publishing
Volume
19
Issue
1
Pages
011001–011001
Publication date
1 January 2026