A critical review of Mg 3 Sb 2 -based thermoelectric materials
Abstract
Abstract Mg 3 Sb 2 -based materials have emerged as highly promising n -type thermoelectric materials within the medium temperature range (300–800 K), offering a more cost-effective and environmentally benign alternative to conventional telluride-based thermoelectric materials. These materials complement Bi 2 Te 3 -based systems for near-room temperature applications (300–500 K) and PbTe/GeTe/SnTe for medium-temperature ranges (500–800 K). This paper presents a systematic review of recent significant advances in the thermoelectric performance of Mg 3 Sb 2 , achieved through optimized doping and fabrication strategies. It outlines key methodologies and underlying physical mechanisms that contribute to high-performance n -type Mg 3 Sb 2 , discusses challenges associated with device integration, and proposes future research directions.
Fields of Study & Subjects
Advanced Thermoelectric Materials and Devices
Heusler alloys: electronic and magnetic properties
Chalcogenide Semiconductor Thin Films
Publication details
- Journal / source
- Applied Physics Express
- Publisher
- IOP Publishing
- Volume
- 19
- Issue
- 2
- Pages
- 020101–020101
- Publication date
- 1 February 2026
- Language
- EN