GaN-based MIS HEMT with SiAlN gate dielectric achieving over 70% PAE and 10 W mm −1 at 8 GHz
Abstract
Abstract We achieved a simultaneous record-high power-added efficiency (PAE) of 71.4% and an output power density of 10.4 W mm −1 at 8 GHz in an AlGaN/GaN metal-insulator-semiconductor (MIS) high-electron-mobility transistor (HEMT) on a free-standing GaN substrate, utilizing SiAlN as the gate dielectric. This exceptional performance stems from the high quality of the metal-organic chemical vapor deposited SiAlN gate dielectric and the gate field plate structure employing a SiN/SiAlN stack, enabling the combined realization of high output power and efficiency. These results emphatically demonstrate the significant potential of MIS gate structures for advanced microwave power amplifiers across various applications.
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Advanced Power Amplifier Design
Silicon Carbide Semiconductor Technologies
Publication details
- Journal / source
- Applied Physics Express
- Volume
- 19
- Issue
- 2
- Pages
- 021010–021010
- Publication date
- 1 February 2026
- Language
- EN