Field plate multi-finger diamond MOSFET with ampere-class current capability and a breakdown voltage of 550 V
Abstract
Abstract The field plate structure is an effective technique for improving breakdown characteristics. In this work, the gate field plate (GFP) diamond MOSFET with both ampere-class current capability and high breakdown voltage is demonstrated for the first time. The maximum drain current of the fabricated device was 0.82 A with a breakdown voltage of 550 V. From the double pulse test, the rise time and fall time are 56 ns and 15 ns, respectively, even at a supply voltage of −200 V and a drain current of 1 A. These results indicate that a diamond MOSFET is promising for power devices.
Fields of Study & Subjects
Diamond and Carbon-based Materials Research
Pulsed Power Technology Applications
Silicon Carbide Semiconductor Technologies
Publication details
- Journal / source
- Applied Physics Express
- Publisher
- IOP Publishing
- Volume
- 19
- Issue
- 3
- Pages
- 031002–031002
- Publication date
- 24 February 2026
- Language
- EN