Electric-field-induced magnetization reversal in cobalt-substituted BiFeO 3 : a review
Abstract
Abstract Electric-field control in multiferroic materials is attracting attention for next-generation memory devices with low power consumption, high recording density, and non-volatility. This review overviews magnetization reversal in cobalt-substituted BiFeO 3 (BiFe 1– x Co x O 3 ), a single-phase room-temperature multiferroic. Experimental results from microscopic direct observations of domains using scanning probe microscopy are summarized, highlighting how electric-field-induced reversal is influenced by domain structures, film orientations, and switching angles. Spatial control of domains in nanodot arrays and associated size effects are also discussed. These insights offer a clear perspective toward magnetoelectric memory applications.
Fields of Study & Subjects
Multiferroics and related materials
Ferroelectric and Piezoelectric Materials
Ferroelectric and Negative Capacitance Devices
Publication details
- Journal / source
- Applied Physics Express
- Publisher
- IOP Publishing
- Volume
- 19
- Issue
- 4
- Pages
- 040101–040101
- Publication date
- 25 February 2026
- Language
- EN