Freestanding 30 mm square {111} twin-free heteroepitaxial diamonds grown on highly-misoriented {0001} sapphire substrates
Abstract
Abstract Freestanding 30 mm square twin-free {111} diamond films were obtained by heteroepitaxial growth on highly misoriented sapphire substrates. X-ray rocking curve revealed high crystal quality of the diamond with full width at half maximum of 94 arcsec for {111} plane. X-ray pole figure of {220} diffraction peaks exhibited threefold symmetry, suggesting the single crystallinity without twinning. Results of systematic investigation of off-angle and off-direction dependencies demonstrated that large misorientation toward 〈11-20〉 of {0001} plane sapphire substrate not only promotes step-flow growth but also suppresses twin formation by aligning 〈11-2〉 step direction of {111} diamond.
Fields of Study & Subjects
Diamond and Carbon-based Materials Research
Electronic and Structural Properties of Oxides
Advanced Surface Polishing Techniques
Publication details
- Journal / source
- Applied Physics Express
- Publisher
- IOP Publishing
- Volume
- 19
- Issue
- 3
- Pages
- 031003–031003
- Publication date
- 26 February 2026
- Language
- EN