Impact of Localized Thermal Gradients on Differential Aging Telemetry in 5nm FinFET: A Post-Layout Analysis
Abstract
As semiconductor process nodes scale into the angstrom regime, the reliability margin between nominal operation and failure has collapsed. Degradation mechanisms such as Bias Temperature Instability (BTI) and Hot Carrier Injection (HCI) have transitio
Fields of Study & Subjects
Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
Silicon and Solar Cell Technologies
Publication details
- Publication date
- 8 January 2026
- Document type
- Preprint