Tunable Ballistic Directron AlGaN/GaN Photonic Heterojunction Bipolar Transistor with Quantum Metaconduction Logic Value

The effect of device scaling on the performance of wurtzite n-p-n AlGaN/GaN HBTs is studied using quantum transport for the ballistic terahertz tunable regimes. The impact of spontaneous polarization, piezoelectric polarization and temperature on the HBT characteristics is studied. The major scattering mechanisms responsible for limiting the unity gain frequencies are identified. The impact of effective mass and dielectric constant tensor anisotropy are identified. The effect of plasmons and plasmon-phonon coupling on base transport is systematically studied for various base doping concentrations. The impact of base doping and of large (>150meV) acceptor ionization energies are identified. Unity gain frequencies of 2.4THz are achievable by proper device design. The intrinsic base transit time limits are in the 100THz regime and lead to short time quantum oscillations in the transition amplitudes. Photonic response is obtained in detection regimes.